Invention Grant
- Patent Title: Method for manufacturing thermoelectric conversion module, thermoelectric conversion module, and binder for thermoelectric conversion module
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Application No.: US16758166Application Date: 2018-10-24
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Publication No.: US11575076B2Publication Date: 2023-02-07
- Inventor: Motohiro Negishi , Yuki Kawana , Dai Ishikawa , Chie Sugama , Hideo Nakako , Yoshinori Ejiri
- Applicant: HITACHI CHEMICAL COMPANY, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI CHEMICAL COMPANY, LTD.
- Current Assignee: HITACHI CHEMICAL COMPANY, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Fitch, Even, Tabin & Flannery, LLP
- Priority: JPJP2017-205096 20171024
- International Application: PCT/JP2018/039507 WO 20181024
- International Announcement: WO2019/082932 WO 20190502
- Main IPC: H01L35/34
- IPC: H01L35/34 ; C22C5/02 ; C22C5/04 ; C22C5/06 ; C22C19/03 ; H01L35/08

Abstract:
A method for manufacturing a thermoelectric conversion module of the present invention is a method for manufacturing a thermoelectric conversion module including a thermoelectric semiconductor part in which a plurality of p-type semiconductors and a plurality of n-type semiconductors are alternately arranged, and a high temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a high temperature heat source side and a low temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a low temperature heat source side, which electrically connect the p-type semiconductor and the n-type semiconductor adjacent to each other in series, and includes a binding step of binding at least one of the high temperature side electrode and the low temperature side electrode, and the p-type semiconductor and the n-type semiconductor together, by sintering a binding layer containing metal particles, which is provided between the electrode and the semiconductor.
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