Invention Grant
- Patent Title: MEMS structures and methods of forming MEMS structures
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Application No.: US16695313Application Date: 2019-11-26
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Publication No.: US11575081B2Publication Date: 2023-02-07
- Inventor: Bevita Kallupalathinkal Chandran , Jia Jie Xia , Tze Sheong Neoh
- Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Applicant Address: SG Singapore
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agent Winston Hsu
- Main IPC: H01L41/08
- IPC: H01L41/08 ; C01B21/072

Abstract:
A MEMS structure may include a substrate, a first metal layer arranged over the substrate, an aluminum nitride layer at least partially arranged over the first metal layer and a second metal layer including one or more patterns arranged over the aluminum nitride layer. The first metal layer may include an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection. Each pattern of the second metal layer may be arranged to at least partially overlap with one of the isolated area(s) of the first metal layer.
Public/Granted literature
- US20210159387A1 MEMS STRUCTURES AND METHODS OF FORMING MEMS STRUCTURES Public/Granted day:2021-05-27
Information query
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