Invention Grant
- Patent Title: Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory
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Application No.: US15943461Application Date: 2018-04-02
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Publication No.: US11575083B2Publication Date: 2023-02-07
- Inventor: Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Ian Young , Dmitri Nikonov , Chia-Ching Lin
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01L43/04
- IPC: H01L43/04 ; H01L43/06 ; H01L43/10 ; G11C11/16 ; H01L43/14 ; B82Y25/00

Abstract:
An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization (e.g., perpendicular magnetization); a first structure adjacent to the magnetic junction, wherein the first structure comprises metal (e.g., Hf, Ta, W, Ir, Pt, Bi, Cu, Mo, Gf, Ge, Ga, or Au); an interconnect adjacent to the first structure; and a second structure adjacent to the interconnect such that the first structure and the second structure are on opposite surfaces of the interconnect, wherein the second structure comprises a magnet with a second magnetization (e.g., in-plane magnetization) substantially different from the first magnetization.
Public/Granted literature
- US20190305212A1 APPARATUS FOR IMPROVING SPIN ORBIT COUPLING BASED SWITCHING IN A MAGNETIC MEMORY Public/Granted day:2019-10-03
Information query
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