Invention Grant
- Patent Title: Semiconductor laser device
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Application No.: US16958091Application Date: 2018-12-27
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Publication No.: US11575244B2Publication Date: 2023-02-07
- Inventor: Hiroyuki Tajiri
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JPJP2018-003312 20180112
- International Application: PCT/JP2018/048181 WO 20181227
- International Announcement: WO2019/138909 WO 20190718
- Main IPC: H01S5/02345
- IPC: H01S5/02345 ; H01S5/026 ; H01S5/02 ; H01S5/022

Abstract:
A semiconductor laser device includes a semiconductor laser element, a base material supporting the semiconductor laser element, and a wiring portion formed on the base material and constituting a conduction path to the semiconductor laser element. The base material includes a mounting face oriented to one side in a thickness direction of the base material and having the semiconductor laser element mounted thereon, while also including an emission part located on one side with respect to the semiconductor laser element in a first direction perpendicular to the thickness direction. Light from the semiconductor laser element is emitted through the emission part to the outside.
Public/Granted literature
- US20200343685A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2020-10-29
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