Invention Grant
- Patent Title: Film forming apparatus and method for reducing arcing
-
Application No.: US17330946Application Date: 2021-05-26
-
Publication No.: US11578402B2Publication Date: 2023-02-14
- Inventor: Po-Wei Wang , Chao-Hsing Lai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Nz Carr Law Office
- Main IPC: C23C14/35
- IPC: C23C14/35 ; C23C14/00 ; C23C14/34 ; C23C14/50 ; H01J37/32 ; H01J37/34

Abstract:
Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber, the first gas injector having a movable gas outlet.
Public/Granted literature
- US20220380886A1 FILM FORMING APPARATUS AND METHOD FOR REDUCING ARCING Public/Granted day:2022-12-01
Information query
IPC分类: