Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.