Invention Grant
- Patent Title: Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods
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Application No.: US17151538Application Date: 2021-01-18
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Publication No.: US11581039B2Publication Date: 2023-02-14
- Inventor: Win-San Khwa , Kerem Akarvardar , Yu-Sheng Chen
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: The Marbury Law Group, PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
Various embodiments provide methods for configuring a phase-change random-access memory (PCRAM) structures, such as PCRAM operating in a single-level-cell (SLC) mode or a multi-level-cell (MLC) mode. Various embodiments may support a PCRAM structure being operating in a SLC mode for lower power and a MLC mode for lower variability. Various embodiments may support a PCRAM structure being operating in a SLC mode or a MLC mode based at least in part on an error tolerance for a neural network layer.
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