Invention Grant
- Patent Title: Rotary charge stripping film in charge stripping device of ion beam and charge stripping method of ion beam
-
Application No.: US16320340Application Date: 2017-07-27
-
Publication No.: US11581105B2Publication Date: 2023-02-14
- Inventor: Mutsuaki Murakami , Masamitsu Tachibana , Atsushi Tatami , Hiroo Hasebe
- Applicant: KANEKA CORPORATION , RIKEN
- Applicant Address: JP Osaka; JP Saitama
- Assignee: KANEKA CORPORATION,RIKEN
- Current Assignee: KANEKA CORPORATION,RIKEN
- Current Assignee Address: JP Osaka; JP Saitama
- Agency: Osha Bergman Watanabe & Burton LLP
- Priority: JPJP2016-154299 20160805
- International Application: PCT/JP2017/027254 WO 20170727
- International Announcement: WO2018/025746 WO 20180208
- Main IPC: G21K1/14
- IPC: G21K1/14 ; G21K5/08 ; C01B32/182 ; G21K1/00

Abstract:
An object of the present invention is to provide a charge stripping film in a charge stripping device of an ion beam, which has high heat resistance and no toxicity, with which there is no risk of activation, with which an ion beam can be made multivalent even if the charge stripping film is thin, and which is resistant to high-energy beam radiation over an extended period of time. The present invention comprises a charge stripping film used in a device which strips a charge of an ion beam, wherein the charge stripping film is a rotary charge stripping film comprising a carbon film having a thermal conductivity of 20 W/mK or more in a film surface direction at 25° C., and a film thickness of the carbon film is more than 3 μm and less than 10 μm. The present invention also comprises a charge stripping film used in a device which strips a charge of an ion beam, wherein the charge stripping film is a rotary charge stripping film comprising a carbon film produced by a polymer annealing method, and a film thickness of the carbon film is more than 3 μm and less than 10 μm.
Public/Granted literature
Information query