The present disclosure relates to the field of semiconductor packaging processes, and provides a semiconductor structure and a forming method thereof. The forming method includes: providing a semiconductor substrate, where a surface of the semiconductor substrate is provided with an exposed conductive structure; forming a passivation layer on the surface of the semiconductor substrate and a surface of the exposed conductive structure; etching the passivation layer to form a recess, where a bottom of the recess exposes one end of the conductive structure; forming an adhesion layer on a surface of the recess; and etching to form a hole in the bottom of the recess.