Invention Grant
- Patent Title: Backside metal patterning die singulation system and related methods
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Application No.: US17216167Application Date: 2021-03-29
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Publication No.: US11581223B2Publication Date: 2023-02-14
- Inventor: Michael J. Seddon
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Adam R. Stephenson, LTD.
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/32 ; H01L21/268 ; H01L21/3205 ; H01L21/3213 ; H01L23/544 ; H01L21/66 ; H01L21/027

Abstract:
Implementations of methods of singulating a plurality of die included in a substrate may include forming a plurality of die on a first side of a substrate, forming a backside metal layer on a second side of a substrate, applying a photoresist layer over the backside metal layer, patterning the photoresist layer along a die street of the substrate, and etching through the backside metal layer located in the die street of the substrate. The substrate may be exposed through the etch. The method may also include singulating the plurality of die included in the substrate through removing a substrate material in the die street.
Public/Granted literature
- US20210217664A1 BACKSIDE METAL PATTERNING DIE SINGULATION SYSTEM AND RELATED METHODS Public/Granted day:2021-07-15
Information query
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