Invention Grant
- Patent Title: Method for manufacturing a lateral double-diffused metal-oxide-semiconductor (ldmos) transistor
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Application No.: US17308205Application Date: 2021-05-05
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Publication No.: US11581433B2Publication Date: 2023-02-14
- Inventor: Meng Wang , Yicheng Du , Hui Yu
- Applicant: Silergy Semiconductor Technology (Hangzhou) LTD
- Applicant Address: CN Hangzhou
- Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
- Current Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
- Current Assignee Address: CN Hangzhou
- Priority: CN201810538418.6 20180530
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/82 ; H01L21/8238 ; H01L27/092 ; H01L29/10 ; H01L29/66 ; H01L21/8234 ; H01L27/088 ; H01L29/06
Abstract:
A semiconductor device can include: a substrate having a first doping type; a first well region located in the substrate and having a second doping type, where the first well region is located at opposite sides of a first region of the substrate; a source region and a drain region located in the first region, where the source region has the second doping type, and the drain region has the second doping type; and a buried layer having the second doping type located in the substrate and below the first region, where the buried layer is incontact with the first well region, where the first region is surrounded by the buried layer and the first well region, and the first doping type is opposite to the second doping type.
Public/Granted literature
- US20210257490A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2021-08-19
Information query
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