Invention Grant
- Patent Title: Memory management method, memory storage device and memory control circuit unit
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Application No.: US16779675Application Date: 2020-02-03
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Publication No.: US11586364B2Publication Date: 2023-02-21
- Inventor: Xin Hu , Liang Xu , Xiaoyang Zhang , Zhi Wang
- Applicant: Hefei Core Storage Electronic Limited
- Applicant Address: CN Anhui Province
- Assignee: Hefei Core Storage Electronic Limited
- Current Assignee: Hefei Core Storage Electronic Limited
- Current Assignee Address: CN Anhui Province
- Agency: JCIPRNET
- Priority: CN201911310733.4 20191218
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/20

Abstract:
A memory management method is provided according to the invention. The method includes: reading a physical unit and updating a read count of the physical unit; scanning the physical unit if the updated read count is not less than a read count threshold; and adjusting the read count threshold according to the read count and a read error bit. Therefore, a data unit that needs to be scanned can be determined to reduce unnecessary data scanning.
Public/Granted literature
- US20210191635A1 MEMORY MANAGEMENT METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT Public/Granted day:2021-06-24
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