Invention Grant
- Patent Title: Thin-film device having a close-contact layer covering part of a wiring electrode, and method of manufacturing thin-film device
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Application No.: US16227193Application Date: 2018-12-20
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Publication No.: US11587734B2Publication Date: 2023-02-21
- Inventor: Souko Fukahori , Toshiyuki Nakaiso
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Nagaokakyo
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Nagaokakyo
- Agency: ArentFox Schiff LLP
- Priority: JPJP2016-254714 20161228
- Main IPC: H01G4/228
- IPC: H01G4/228 ; H01G4/33

Abstract:
A thin-film device that includes a wiring electrode which contains copper. A terminal electrode is formed on a first region of the first main surface of the wiring electrode. A first close-contact layer made of a material different from copper and that has a shape covering, in a continuous manner, a second region of the first main surface of the wiring electrode, the second region being adjacent to the first region, and the side surface of the wiring electrode that is continuous with the second region.
Public/Granted literature
- US20190122822A1 THIN-FILM DEVICE AND METHOD OF MANUFACTURING THIN-FILM DEVICE Public/Granted day:2019-04-25
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