Invention Grant
- Patent Title: Semiconductor device, method for manufacturing the same, and power converter
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Application No.: US16583096Application Date: 2019-09-25
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Publication No.: US11587797B2Publication Date: 2023-02-21
- Inventor: Masayuki Mafune
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2018-217241 20181120
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/492 ; H02M7/5387
Abstract:
A semiconductor device includes a metal base plate, a case component, and a metal component. The metal component is fixed to the case component. A partial region of the metal component is exposed from the case component. The partial region is bonded to the base plate in a bonding portion. In the bonding portion, a surface of the partial region and a surface of the base plate are in direct contact with each other and integrated.
Public/Granted literature
- US20200161145A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND POWER CONVERTER Public/Granted day:2020-05-21
Information query
IPC分类:
