Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US17396565Application Date: 2021-08-06
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Publication No.: US11587845B2Publication Date: 2023-02-21
- Inventor: Chi-Hsi Wu , Wensen Hung , Tsung-Shu Lin , Shih-Chang Ku , Tsung-Yu Chen , Hung-Chi Li
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/367 ; H01L21/48 ; H01L25/065 ; H01L25/00 ; H01L23/373

Abstract:
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a die stack disposed over the substrate, a heat spreader disposed over the substrate and having a surface facing the substrate, and a thermal interface material (TIM) disposed between the die stack and the heat spreader. A bottommost die of the die stack includes a surface exposed from remaining dies of the die stack from a top view perspective; and the TIM is in contact with the exposed surface of the bottommost die and the surface of the heat spreader, and is in contact with a sidewall of at least one of the plurality of dies of the die stack.
Public/Granted literature
- US20210366805A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2021-11-25
Information query
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