Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
-
Application No.: US17155608Application Date: 2021-01-22
-
Publication No.: US11587861B2Publication Date: 2023-02-21
- Inventor: Hiroyuki Nogawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JPJP2020-059883 20200330
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00 ; H01L23/16 ; H01L23/29 ; H01L21/56 ; H01L23/053 ; H01L23/15 ; H01L21/48

Abstract:
A semiconductor device including an insulating circuit board. The insulating circuit board has an insulating plate, a plurality of circuit patterns disposed on a front surface of the insulating plate, any adjacent two of the circuit patterns having a gap therebetween, each circuit pattern having at least one corner, each corner being in a corner area that covers the corner and a portion of each gap adjacent to the corner, and a buffer material containing resin, applied at a plurality of corner areas, to fill the gaps in the plurality of corner areas.
Public/Granted literature
- US20210305144A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-09-30
Information query
IPC分类: