Invention Grant
- Patent Title: Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances
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Application No.: US17202281Application Date: 2021-03-15
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Publication No.: US11587862B2Publication Date: 2023-02-21
- Inventor: Han Wui Then , Sansaptak Dasgupta , Marko Radosavljevic , Sanaz K. Gardner
- Applicant: Tahoe Research, Ltd.
- Applicant Address: IE Dublin
- Assignee: Tahoe Research, Ltd.
- Current Assignee: Tahoe Research, Ltd.
- Current Assignee Address: IE Dublin
- Agency: Studebaker & Brackett PC
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/48 ; H01L23/52 ; H01L23/522 ; H01L21/762 ; H01L21/764 ; H01L21/768 ; H01L29/06 ; H01L23/532
Abstract:
Embodiments of the invention include a microelectronic device that includes a substrate, at least one dielectric layer on the substrate and a plurality of conductive lines within the at least one dielectric layer. The microelectronic device also includes an air gap structure that is located below two or more of the plurality of conductive lines.
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