Invention Grant
- Patent Title: Semiconductor device and method of making the same
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Application No.: US17164586Application Date: 2021-02-01
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Publication No.: US11587883B2Publication Date: 2023-02-21
- Inventor: Cheng-Chieh Hsieh , Hau Tao , Yung-Tien Kuo
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/64 ; H01L23/552 ; H01L23/31 ; H01L23/367 ; H01L21/56 ; H01L23/00 ; H01L25/07 ; H01L25/065 ; H01L25/11 ; H01F17/00

Abstract:
A semiconductor device includes an interposer disposed on a substrate. A first major surface of the interposer faces the substrate. A system on a chip is disposed on a second major surface of the interposer. The second major surface of the interposer opposes the first major surface of the interposer. A plurality of first passive devices is disposed in the first major surface of the interposer. A plurality of second passive devices is disposed on the second major surface of the interposer. The second passive devices are different devices than the first passive devices.
Public/Granted literature
- US20210159187A1 SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME Public/Granted day:2021-05-27
Information query
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