A patterned ground shield device includes a first patterned ground shield layer and a second patterned ground shield layer. The first patterned ground shield layer is located on a first layer, and the second patterned ground shield layer is located on a second layer. The first patterned ground shield layer includes a plurality of first strip-shaped structures, and each of the first strip-shaped structures includes an oxide diffusion material. The second patterned ground shield layer includes a plurality of second strip-shaped structures, and each of the second strip-shaped structures includes a conductive material, wherein the first strip-shaped structures and the second strip-shaped structures are disposed to each other in an interlaced manner.