Invention Grant
- Patent Title: Solid-state imaging element and electronic apparatus
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Application No.: US16607028Application Date: 2018-02-13
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Publication No.: US11587963B2Publication Date: 2023-02-21
- Inventor: Haruyuki Nakagawa
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JPJP2017-090536 20170428
- International Application: PCT/JP2018/004875 WO 20180213
- International Announcement: WO2018/198486 WO 20181101
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
To enhance a charge transfer efficiency in a transfer gate having a vertical gate electrode. A solid-state imaging element includes a photoelectric conversion section, a charge accumulating section, and a transfer gate. The photoelectric conversion section is formed in a depth direction of a semiconductor substrate, and generates charges corresponding to a quantity of received light. The charge accumulating section accumulates the charges generated by the photoelectric conversion section. The transfer gate transfers the charges generated by the photoelectric conversion section to the charge accumulating section. The transfer gate includes a plurality of vertical gate electrodes which is filled to a predetermined depth from an interface of the semiconductor substrate, and at least a part of a diameter is different in the depth direction of the semiconductor substrate.
Information query
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