A trench MOSFET and a manufacturing method of the same are provided. The trench MOSFET includes a substrate, an epitaxial layer having a first conductive type, a gate in a trench in the epitaxial layer, a gate oxide layer, a source region having the first conductive type, and a body region and an anti-punch through region having a second conductive type. The anti-punch through region is located at an interface between the source region and the body region, and a doping concentration thereof is higher than that of the body region. The epitaxial layer has a first pn junction near the source region and a second pn junction near the substrate. N regions are divided into N equal portions between the two pn junctions, and N is an integer greater than 1. The closer the N regions are to the first pn junction, the greater the doping concentration thereof is.