Invention Grant
- Patent Title: Semiconductor structure for memory device and method for forming the same
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Application No.: US16730537Application Date: 2019-12-30
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Publication No.: US11588031B2Publication Date: 2023-02-21
- Inventor: Szu-Yu Wang , Chia-Wei Hu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/788 ; H01L29/49 ; H01L29/66 ; H01L21/28 ; H01L21/3213 ; H01L21/02
Abstract:
A semiconductor structure for a memory device includes a first gate structure and a second gate structure adjacent to the first gate structure. The second gate structure includes a first layer and a second layer, and the first layer is between the second layer and the first gate structure. The first layer and the second layer include a same semiconductor material and same dopants. The first layer has a first dopant concentration, and the second layer has a second dopant concentration different from the firs dopant concentration.
Public/Granted literature
- US20210202706A1 SEMICONDUCTOR STRUCTURE FOR MEMORY DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2021-07-01
Information query
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