Invention Grant
- Patent Title: Fin field-effect transistor and method of forming the same
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Application No.: US17070634Application Date: 2020-10-14
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Publication No.: US11588041B2Publication Date: 2023-02-21
- Inventor: Jian-Jou Lian , Tzu Ang Chiang , Ming-Hsi Yeh , Chun-Neng Lin , Po-Yuan Wang , Chieh-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Foley & Lardner LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8234 ; H01L29/78
Abstract:
A method for manufacturing a semiconductor device includes forming a gate trench over a semiconductor fin, the gate trench including an upper portion and a lower portion. The method includes sequentially forming one or more work function layers, a capping layer, and a glue layer over the gate trench. The glue layer includes a first sub-layer and a second sub-layer that have respective different etching rates with respect to an etching solution. The method includes removing the second sub-layer while leaving a first portion of the first sub-layer filled in the lower portion of the gate trench.
Public/Granted literature
- US20220115519A1 FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME Public/Granted day:2022-04-14
Information query
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