Invention Grant
- Patent Title: Semiconductor component and manufacturing method thereof
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Application No.: US16989871Application Date: 2020-08-10
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Publication No.: US11588047B2Publication Date: 2023-02-21
- Inventor: Hao Li , Haoning Zheng , Anbang Zhang
- Applicant: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Applicant Address: CN Zhuhai
- Assignee: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Current Assignee: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Zhuhai
- Agency: Idea Intellectual Limited
- Agent Margaret A. Burke; Sam T. Yip
- Priority: CN202010499377.1 20200604
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/40 ; H01L29/66
Abstract:
The present disclosure discloses a semiconductor component and a method for forming the semiconductor component. The semiconductor component includes a substrate, a III-V layer, a doped III-V layer, a gate contact, a first field plate, and a second field plate. The gate contact has first and second sides away from the doped III-V layer. The first field plate has first and second sides, and the first side is closer to the second side of the gate contact than the second side. The second field plate has first and second sides, and the first side is closer to the second side of the gate contact than the second side. The first field plate is closer to the doped III-V layer than the second field plate and the first side and the second side of the gate contact.
Public/Granted literature
- US20210384338A1 SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-12-09
Information query
IPC分类:
