Invention Grant
- Patent Title: Infrared photodetector architectures for high temperature operations
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Application No.: US17100041Application Date: 2020-11-20
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Publication No.: US11588068B2Publication Date: 2023-02-21
- Inventor: Jamal Mustafa , Edward P. Smith , Bradly Eachus
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Burns & Levinson, LLP
- Agent Joseph M. Maraia
- Main IPC: H01L31/11
- IPC: H01L31/11 ; H01L27/146 ; H01L31/0304 ; H01L31/18
Abstract:
A photo detector having a substrate and a first structure formed on the substrate. The first structure includes an emitter layer formed on the substrate and a base layer formed on the emitter layer. Further, the first structure includes a collector layer formed on the base layer. The collector layer has a plasmonic structure. The plasmonic structure includes a first plurality of mesa structures. Each of the mesa structures of the first plurality of mesa structures includes a second plurality of mesa structures having ridges arranged in a regularly repeating pattern.
Public/Granted literature
- US20220165903A1 INFRARED PHOTODETECTOR ARCHITECTURES FOR HIGH TEMPERATURE OPERATIONS Public/Granted day:2022-05-26
Information query
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