Invention Grant
- Patent Title: Method of manufacturing a multi-layer PZT microactuator using wafer-level processing
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Application No.: US16186408Application Date: 2018-11-09
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Publication No.: US11588098B2Publication Date: 2023-02-21
- Inventor: Christopher Dunn , Peter Hahn
- Applicant: Magnecomp Corporation
- Applicant Address: US CA Murrieta
- Assignee: Magnecomp Corporation
- Current Assignee: Magnecomp Corporation
- Current Assignee Address: US CA Murrieta
- Agency: DLA Piper LLP (US)
- Main IPC: H01L41/27
- IPC: H01L41/27 ; H01L41/338 ; H01L41/273 ; H01L41/09 ; H01L41/053 ; H01L41/277 ; H01L41/23 ; H03H3/08 ; H01L41/312

Abstract:
A multi-level piezoelectric actuator is manufactured using wafer level processing. Two PZT wafers are formed and separately metallized for electrodes. The metallization on the second wafer is patterned, and holes that will become electrical vias are formed in the second wafer. The wafers are then stacked and sintered, then the devices are poled as a group and then singulated to form nearly complete individual PZT actuators. Conductive epoxy is added into the holes at the product placement step in order to both adhere the actuator within its environment and to complete the electrical via thus completing the device. Alternatively: the first wafer is metallized; then the second wafer having holes therethrough but no metallization is stacked and sintered to the first wafer; and patterned metallization is applied to the second wafer to both form electrodes and to complete the vias. The devices are then poled as a group, and singulated.
Public/Granted literature
- US20190081232A1 Method of Manufacturing a Multi-Layer PZT Microactuator Using Wafer-Level Processing Public/Granted day:2019-03-14
Information query
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