Invention Grant
- Patent Title: Phase-change memory device with reduced programming voltage
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Application No.: US17198775Application Date: 2021-03-11
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Publication No.: US11588105B2Publication Date: 2023-02-21
- Inventor: Praneet Adusumilli , Takashi Ando , Reinaldo Vega , Cheng Chi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Kelli D. Morin; Scott S. Dobson
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L45/00 ; G11C13/00

Abstract:
A device includes an electronic component, and the electronic component includes a first pad, a second pad, and a strip connecting the first pad and the second pad. The device further includes a first electrode in contact with the first pad and a second electrode in contact with the second pad. The electronic component is made of a phase change material. At least one of the first electrode and the second electrode is coated with a material that is configured to increase a difference in workfunction between the first electrode and the second electrode.
Public/Granted literature
- US20220293853A1 PHASE-CHANGE MEMORY DEVICE WITH REDUCED PROGRAMMING VOLTAGE Public/Granted day:2022-09-15
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