Invention Grant
- Patent Title: Method of forming a high temperature sensor
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Application No.: US17356622Application Date: 2021-06-24
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Publication No.: US11590576B2Publication Date: 2023-02-28
- Inventor: Navin Sakthivel , Aaron Avagliano , Farhat Shaikh , Wei Chen , Dan Lu
- Applicant: Navin Sakthivel , Aaron Avagliano , Farhat Shaikh , Wei Chen , Dan Lu
- Applicant Address: US TX Spring; US TX Tomball; US TX Houston; US TX Sugar Land; US NV Minden
- Assignee: Navin Sakthivel,Aaron Avagliano,Farhat Shaikh,Wei Chen,Dan Lu
- Current Assignee: Navin Sakthivel,Aaron Avagliano,Farhat Shaikh,Wei Chen,Dan Lu
- Current Assignee Address: US TX Spring; US TX Tomball; US TX Houston; US TX Sugar Land; US NV Minden
- Agency: Cantor Colburn LLP
- Main IPC: B22F10/00
- IPC: B22F10/00 ; B33Y10/00 ; B33Y80/00 ; G01D11/30 ; E21B47/017 ; B22F7/06

Abstract:
A method of forming a high temperature sensor includes preparing a substrate having a surface from an electrically insulative material having a first coefficient of thermal expansion (CTE), preparing an electrical conductor from a metal material having a second CTE that is different from the first CTE, and creating an interface between the electrical conductor and the substrate with a CTE blending medium that is provided between the substrate and the electrical conductor. The CTE blending medium accommodates differing thermal expansion rates of the substrate and the electrical conductor at temperatures of at least 700° C.
Public/Granted literature
- US20220410267A1 METHOD OF FORMING A HIGH TEMPERATURE SENSOR Public/Granted day:2022-12-29
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