Invention Grant
- Patent Title: Sputtering target and producing method thereof
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Application No.: US16741838Application Date: 2020-01-14
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Publication No.: US11591687B2Publication Date: 2023-02-28
- Inventor: Tomoji Mizuguchi , Hidetoshi Sasaoka , Haruhi Nakamura , Atsushi Gorai
- Applicant: JX Nippon Mining & Metals Corporation
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Nields, Lemack & Frame, LLC
- Priority: JPJP2019-040060 20190305
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/08 ; C04B35/457

Abstract:
An object of the present invention is to provide a sputtering target that can suppress a generation amount of fine nodules which lead to an increase in substrate particles during sputtering, and a method for producing the same. A ceramic sputtering target, the sputtering target having a surface roughness Ra on a sputtering surface of 0.5 μm or less and an Svk value measured with a laser microscope on the sputtering surface of 1.1 μm or less.
Public/Granted literature
- US20200283888A1 Sputtering Target And Producing Method Thereof Public/Granted day:2020-09-10
Information query
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