Invention Grant
- Patent Title: Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium
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Application No.: US17137034Application Date: 2020-12-29
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Publication No.: US11591694B2Publication Date: 2023-02-28
- Inventor: Hiroaki Hiramatsu , Shinya Ebata
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JPJP2017-199502 20171013
- Main IPC: H01L21/228
- IPC: H01L21/228 ; C23C16/52 ; H01L21/67 ; C23C16/455 ; H01L21/02 ; H01L21/66 ; C23C16/458 ; C23C16/34

Abstract:
A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.
Public/Granted literature
- US20210115563A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM Public/Granted day:2021-04-22
Information query
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