Invention Grant
- Patent Title: Memory system
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Application No.: US17350341Application Date: 2021-06-17
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Publication No.: US11593285B2Publication Date: 2023-02-28
- Inventor: Chang Kyun Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2019-0010756 20190128
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G06F3/06 ; G11C11/409

Abstract:
A memory system includes a memory device, a memory controller configured to control the memory device, and an interface device configured to perform an interfacing operation for transmission of a control signal and data between the memory device and the memory controller. The interface device activates a blocking function for the interfacing operation in response to a configuration command of the memory controller including a blocking activation signal and performs an interface configuration operation in response to an interface configuration command of the memory controller while the blocking function is activated.
Public/Granted literature
- US20210311890A1 MEMORY SYSTEM Public/Granted day:2021-10-07
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