Invention Grant
- Patent Title: Self select memory cell based artificial synapse
-
Application No.: US16549958Application Date: 2019-08-23
-
Publication No.: US11593624B2Publication Date: 2023-02-28
- Inventor: Paolo Fantini
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G06N3/04
- IPC: G06N3/04 ; G06N3/06 ; G06N3/049 ; G06N3/063

Abstract:
Apparatuses and methods for implementing artificial synapses utilizing SSM cells. A leaky-integrate-and-fire circuit can provide a feedback signal to an SSM cell responsive to a threshold quantity of pulses being applied to the gate from the signal line. A resulting state of the SSM cell can be dependent on a time difference between a latest of the threshold quantity of pulses and an initial pulse of the feedback signal.
Public/Granted literature
- US20210056382A1 SELF SELECT MEMORY CELL BASED ARTIFICIAL SYNAPSE Public/Granted day:2021-02-25
Information query