Invention Grant
- Patent Title: Thermistor and method for manufacturing thermistor
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Application No.: US17267814Application Date: 2019-08-21
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Publication No.: US11594350B2Publication Date: 2023-02-28
- Inventor: Takehiro Yonezawa , Satoko Higano
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV; Nicholas J. DiCeglie, Jr.
- Priority: JPJP2018-156647 20180823,JPJP2019-143817 20190805,JPJP2019-143890 20190805
- International Application: PCT/JP2019/032629 WO 20190821
- International Announcement: WO2020/040193 WO 20200227
- Main IPC: H01C7/00
- IPC: H01C7/00 ; H01C17/28 ; H01C1/14 ; H01C1/142 ; H01C17/065

Abstract:
A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L0 of a length L of an observed peeled portion to a length L0 of the bonding interface in an observation field is 0.16 or less.
Public/Granted literature
- US11557409B2 Thermistor and method for manufacturing thermistor Public/Granted day:2023-01-17
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