Invention Grant
- Patent Title: Semiconductor structure having sets of III-V compound layers and method of forming
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Application No.: US17039324Application Date: 2020-09-30
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Publication No.: US11594413B2Publication Date: 2023-02-28
- Inventor: Chi-Ming Chen , Po-Chun Liu , Chung-Yi Yu , Chia-Shiung Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L21/02 ; H01L29/778 ; H01L29/66 ; H01L29/15 ; H01L29/20 ; H01L29/205
Abstract:
A semiconductor structure includes a substrate. The semiconductor structure further includes a buffer layer over the substrate, wherein the buffer layer comprises a plurality of III-V layers, and a dopant type of each III-V layer of the plurality of III-V layers is opposite to a dopant of adjacent III-V layers of the plurality of III-V layers. The semiconductor structure further includes an active layer over the buffer layer. The semiconductor structure further includes a dielectric layer over the active layer.
Public/Granted literature
- US20210028016A1 SEMICONDUCTOR STRUCTURE HAVING SETS OF III-V COMPOUND LAYERS AND METHOD OF FORMING Public/Granted day:2021-01-28
Information query
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