Invention Grant
- Patent Title: Plasma etching chemistries of high aspect ratio features in dielectrics
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Application No.: US16979372Application Date: 2019-03-12
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Publication No.: US11594429B2Publication Date: 2023-02-28
- Inventor: Keren J. Kanarik , Samantha SiamHwa Tan , Yang Pan , Jeffrey Marks
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- International Application: PCT/US2019/021761 WO 20190312
- International Announcement: WO2019/178030 WO 20190919
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/683
Abstract:
A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.
Public/Granted literature
- US20210005472A1 PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECTRICS Public/Granted day:2021-01-07
Information query
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