Invention Grant
- Patent Title: Method of making a semiconductor structure
-
Application No.: US17207152Application Date: 2021-03-19
-
Publication No.: US11594449B2Publication Date: 2023-02-28
- Inventor: Chih-Ming Lee , Hung-Che Liao , Kun-Tsang Chuang , Wei-Chung Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/02
Abstract:
A method of making a semiconductor structure includes depositing a first passivation material between adjacent conductive elements on a substrate, wherein a bottommost surface of the first passivation material is coplanar with a bottommost surface of each of the adjacent conductive elements. The method further includes depositing a second passivation material on the substrate, wherein the second passivation material contacts a sidewall of each of the adjacent conductive elements and a sidewall of the first passivation material, a bottommost surface of the second passivation material is coplanar with the bottommost surface of each of the adjacent conductive elements, and the second passivation material is different from the first passivation material.
Public/Granted literature
- US20210210381A1 METHOD OF MAKING A SEMICONDUCTOR STRUCTURE Public/Granted day:2021-07-08
Information query
IPC分类:
