Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16936115Application Date: 2020-07-22
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Publication No.: US11594530B2Publication Date: 2023-02-28
- Inventor: Hideaki Sai
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JPJP2020-046038 20200317
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/866 ; H01L27/08
Abstract:
An eighth semiconductor portion is provided between the first semiconductor portion and the third semiconductor portion. The eighth semiconductor portion is of the second conductivity type, contacting the first semiconductor portion, and having a lower second-conductivity-type impurity concentration than the second semiconductor portion.
Public/Granted literature
- US20210296305A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-09-23
Information query
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