Invention Grant
- Patent Title: Stacked image sensor device and method of forming same
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Application No.: US16890019Application Date: 2020-06-02
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Publication No.: US11594571B2Publication Date: 2023-02-28
- Inventor: Wen-Chih Chiou , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L27/112

Abstract:
A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first logic die including a first through via, an image sensor die hybrid bonded to the first logic die, and a second logic die bonded to the first logic die. A front side of the first logic die facing a front side of the image sensor die. A front side of the second logic die facing a backside of the first logic die. The second logic die comprising a first conductive pad electrically coupled to the first through via.
Public/Granted literature
- US20210273013A1 STACKED IMAGE SENSOR DEVICE AND METHOD OF FORMING SAME Public/Granted day:2021-09-02
Information query
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