Invention Grant
- Patent Title: Liner-free conductive structures
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Application No.: US16887577Application Date: 2020-05-29
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Publication No.: US11594609B2Publication Date: 2023-02-28
- Inventor: Shuen-Shin Liang , Chun-I Tsai , Chih-Wei Chang , Chun-Hsien Huang , Hung-Yi Huang , Keng-Chu Lin , Ken-Yu Chang , Sung-Li Wang , Chia-Hung Chu , Hsu-Kai Chang
- Applicant: Taiwan Semiconductor Manufacturing, Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing, Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing, Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L23/535 ; H01L21/768

Abstract:
The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes forming a liner-free conductive structure on a cobalt conductive structure disposed on a substrate, depositing a cobalt layer on the liner-free conductive structure and exposing the liner-free conductive structure to a heat treatment. The method further includes removing the cobalt layer from the liner-free conductive structure.
Public/Granted literature
- US20210376103A1 LINER-FREE CONDUCTIVE STRUCTURES Public/Granted day:2021-12-02
Information query
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