Invention Grant
- Patent Title: Devices including gate spacer with gap or void and methods of forming the same
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Application No.: US17120553Application Date: 2020-12-14
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Publication No.: US11594619B2Publication Date: 2023-02-28
- Inventor: Kuo-Cheng Chiang , Ching-Wei Tsai , Chi-Wen Liu , Ying-Keung Leung
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/165 ; H01L29/08 ; H01L21/02 ; H01L21/283 ; H01L29/78 ; H01L21/768
Abstract:
Devices and structures that include a gate spacer having a gap or void are described along with methods of forming such devices and structures. In accordance with some embodiments, a structure includes a substrate, a gate stack over the substrate, a contact over the substrate, and a spacer disposed laterally between the gate stack and the contact. The spacer includes a first dielectric sidewall portion and a second dielectric sidewall portion. A void is disposed between the first dielectric sidewall portion and the second dielectric sidewall portion.
Public/Granted literature
- US20210098609A1 Devices Including Gate Spacer with Gap or Void and Methods of Forming the Same Public/Granted day:2021-04-01
Information query
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