Invention Grant
- Patent Title: Bidirectional switches with active substrate biasing
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Application No.: US17168593Application Date: 2021-02-05
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Publication No.: US11594626B2Publication Date: 2023-02-28
- Inventor: Francois Hebert
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/762 ; H01L29/66 ; H01L29/40

Abstract:
Structures for a bidirectional switch and methods of forming such structures. A substrate contact is formed in a trench defined in a substrate. A substrate includes a trench and a substrate contact in the trench. A bidirectional switch, which is on the substrate, includes a first source/drain electrode, a second source/drain electrode, an extension region between the first source/drain electrode and the second source/drain electrode, and a gate structure. A substrate-bias switch, which is on the substrate, includes a gate structure, a first source/drain electrode coupled to the substrate contact, a second source/drain electrode coupled to the first source/drain electrode of the bidirectional switch, and an extension region laterally between the gate structure and the first source/drain electrode.
Public/Granted literature
- US20220254910A1 BIDIRECTIONAL SWITCHES WITH ACTIVE SUBSTRATE BIASING Public/Granted day:2022-08-11
Information query
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