- Patent Title: Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
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Application No.: US17380379Application Date: 2021-07-20
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Publication No.: US11594627B2Publication Date: 2023-02-28
- Inventor: Kiuchul Hwang , Brian D. Schultz , John Logan , Christos Thomidis
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/223 ; H01L29/20 ; H01L29/207 ; H01L29/66
Abstract:
An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material disposed between an electrically conductive gate electrode contact and a gate region of the Enhancement-Mode HEMT, such doped, Group III-N layer increasing resistivity of the Group III-N material to deplete the 2DEG under the gate at zero bias.
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