Invention Grant
- Patent Title: Semiconductor device and overcurrent protection method
-
Application No.: US17184816Application Date: 2021-02-25
-
Publication No.: US11594873B2Publication Date: 2023-02-28
- Inventor: Kei Minagawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JPJP2020-049108 20200319
- Main IPC: H02H5/04
- IPC: H02H5/04 ; H02H1/00 ; H01L25/16

Abstract:
A semiconductor device includes a switching element, a control circuit, and a first and second temperature detectors. The control circuit controls the switching element and have an overcurrent detection circuit for the switching element. The first temperature detector detects the temperature of the switching element and the second temperature detector detects the temperature of the control circuit. The control circuit includes a reference correction circuit for correcting an overcurrent reference value of the overcurrent detection circuit on the basis of a first detection value and a second detection value detected by the first and second temperature detectors and outputting a corrected overcurrent reference value.
Public/Granted literature
- US20210296881A1 SEMICONDUCTOR DEVICE AND OVERCURRENT PROTECTION METHOD Public/Granted day:2021-09-23
Information query