Invention Grant
- Patent Title: Switch circuit
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Application No.: US17186166Application Date: 2021-02-26
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Publication No.: US11595029B2Publication Date: 2023-02-28
- Inventor: Satoshi Kurachi
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JPJP2020-159604 20200924
- Main IPC: H03K3/02
- IPC: H03K3/02 ; H03K3/013 ; H04B1/40 ; H04B15/00

Abstract:
A switch circuit of an embodiment includes a high frequency switch, a first charge pump circuit, a boost signal generation circuit, and a second charge pump circuit. The high frequency switch switches transmission and reception of a high frequency signal. The first charge pump circuit generates a first voltage and a second voltage biased to the high frequency switch. When an edge of an input signal is detected, the boost signal generation circuit generates a first boost signal for temporarily increasing drive capacity of the first charge pump circuit. When the first boost signal is input, the second charge pump circuit operates to temporarily increase the drive capacity of the first charge pump circuit.
Public/Granted literature
- US20220094264A1 SWITCH CIRCUIT Public/Granted day:2022-03-24
Information query
IPC分类: