Invention Grant
- Patent Title: Polishing pad, method for manufacturing polishing pad, and polishing method
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Application No.: US16205318Application Date: 2018-11-30
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Publication No.: US11597053B2Publication Date: 2023-03-07
- Inventor: Chi-Hao Huang , Hsuan-Pang Liu , Yuan-Chun Sie , Pinyen Lin , Cheng-Chung Chien
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: B24B37/20
- IPC: B24B37/20 ; B24D18/00 ; B24B37/22 ; B24B37/26
Abstract:
A polishing pad for a chemical-mechanical polishing apparatus includes a first support layer and a polishing layer. The polishing layer is present on the first support layer. The polishing layer has a top surface that faces away from the first support layer and at least one first cavity that is buried at least beneath the top surface of the polishing layer.
Public/Granted literature
- US20190099856A1 POLISHING PAD, METHOD FOR MANUFACTURING POLISHING PAD, AND POLISHING METHOD Public/Granted day:2019-04-04
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