Invention Grant
- Patent Title: Low frequency S-parameter measurement
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Application No.: US16888443Application Date: 2020-05-29
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Publication No.: US11598805B2Publication Date: 2023-03-07
- Inventor: John J. Pickerd , Kan Tan
- Applicant: Tektronix, Inc.
- Applicant Address: US OR Beaverton
- Assignee: Tektronix, Inc.
- Current Assignee: Tektronix, Inc.
- Current Assignee Address: US OR Beaverton
- Agency: Miller Nash LLP
- Agent Andrew J. Harrington
- Main IPC: G01R31/317
- IPC: G01R31/317

Abstract:
A method determines scattering parameters, S-parameters, for a device under test for a first frequency range. The method includes receiving S-parameters for the device under test for a second frequency range, the second frequency range greater than the first frequency range. Generally, the S-parameters for the device under test for the second frequency range can be determined using known methods. The method further includes measuring an actual response of the device under test, determining a desired signal of the device under test, and determining the S-parameters for the device under test for the first frequency range based the S-parameters for the second frequency range, actual response of the device under test and the desired signal of the device under test.
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