Invention Grant
- Patent Title: Silicon nitride phased array chip based on a suspended waveguide structure
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Application No.: US17337969Application Date: 2021-06-03
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Publication No.: US11598917B2Publication Date: 2023-03-07
- Inventor: Heping Zeng , Jijun Feng , Mengyun Hu , Xiaojun Li , Qinggui Tan , Jinman Ge
- Applicant: Chongqing Institute of East China Normal University , SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY CO., LTD. , East China Normal University
- Applicant Address: CN Chongqing; CN Shanghai; CN Shanghai
- Assignee: Chongqing Institute of East China Normal University,SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY CO., LTD.,East China Normal University
- Current Assignee: Chongqing Institute of East China Normal University,SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY CO., LTD.,East China Normal University
- Current Assignee Address: CN Chongqing; CN Shanghai; CN Shanghai
- Main IPC: G02B6/12
- IPC: G02B6/12 ; G02B6/122 ; G02F1/01

Abstract:
A silicon nitride phased array chip based on a suspended waveguide structure, which includes a silicon nitride waveguide area and a suspended waveguide area. The silicon nitride waveguide area includes a silicon substrate, a silicon dioxide buffer layer, a silicon dioxide cladding layer and a silicon nitride waveguide-based core layer. The silicon nitride waveguide-based core layer includes an optical splitter unit, a first curved waveguide, a thermo-optic phase shifter and a spot-size converter. The suspended waveguide area includes a second curved waveguide and an array grating antenna.
Public/Granted literature
- US20210294032A1 SILICON NITRIDE PHASED ARRAY CHIP BASED ON A SUSPENDED WAVEGUIDE STRUCTURE Public/Granted day:2021-09-23
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