• Patent Title: Ultra-broadband silicon waveguide micro-electro-mechanical systems (MEMS) photonic switch
  • Application No.: US17258750
    Application Date: 2020-02-24
  • Publication No.: US11598921B2
    Publication Date: 2023-03-07
  • Inventor: Daoxin DaiYi Sun
  • Applicant: ZHEJIANG UNIVERSITY
  • Applicant Address: CN Zhejiang
  • Assignee: ZHEJIANG UNIVERSITY
  • Current Assignee: ZHEJIANG UNIVERSITY
  • Current Assignee Address: CN Zhejiang
  • Agency: JCIP Global Inc.
  • Priority: CN201910949968.1 20191008
  • International Application: PCT/CN2020/076340 WO 20200224
  • International Announcement: WO2021/068447 WO 20210415
  • Main IPC: G02B6/35
  • IPC: G02B6/35
Ultra-broadband silicon waveguide micro-electro-mechanical systems (MEMS) photonic switch
Abstract:
An ultra-broadband silicon waveguide micro-electro-mechanical systems (MEMS) photonic switch is provided, which is mainly composed of three parts: input waveguides, a waveguide crossing with a nano-gap, and output waveguides. The waveguide crossing is composed of two identical orthogonal elliptical cylinders. Four ports of the waveguide crossing respectively extend to form single-mode strip waveguides to serve as input/output waveguides. The center of the waveguide crossing is fully etched with a nano-gap. The two symmetrical port waveguides are fully etched with nano-grooves. The lower cladding near the waveguide crossing and the nano-grooves is penetrated and etched. The width of the nano-gap is adjusted through adjusting a voltage applied across both ends of the waveguide crossing, so that a guided-mode directly passes through or is totally reflected. In the disclosure, a propagation path of the photonic switch is switched through adjusting the voltage applied to the waveguide crossing.
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