- Patent Title: Low dropout regulator with less quiescent current in dropout region
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Application No.: US16881240Application Date: 2020-05-22
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Publication No.: US11599134B2Publication Date: 2023-03-07
- Inventor: Susumu Tanimoto , Hiroki Asano
- Applicant: Dialog Semiconductor (UK) Limited
- Applicant Address: GB London
- Assignee: Dialog Semiconductor (UK) Limited
- Current Assignee: Dialog Semiconductor (UK) Limited
- Current Assignee Address: GB London
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G05F3/26
- IPC: G05F3/26 ; G05F1/59

Abstract:
A Low Dropout Regulator (LDO) with Less Quiescent Current in the Dropout Region is described, including an error amplifier configured to compare a reference voltage to an LDO output voltage across a resistive divider, a current mirror configured to mirror a first output of the error amplifier to a first and second output of the current mirror, and a comparator configured to compare the LDO output voltage to a second output of the error amplifier, which has been compared to the second output of the current mirror, and configured to output a control voltage to the error amplifier, where a low quiescent current is maintained when an LDO input voltage is near or less than the LDO output voltage.
Public/Granted literature
- US20210365061A1 Low Dropout Regulator with Less Quiescent Current in Dropout Region Public/Granted day:2021-11-25
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