Invention Grant
- Patent Title: Semiconductor memory device, processing system including the same and power control circuit for the same
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Application No.: US17191499Application Date: 2021-03-03
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Publication No.: US11600308B2Publication Date: 2023-03-07
- Inventor: Chang Hyun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2020-0124672 20200925
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C5/04 ; H01L25/065

Abstract:
A semiconductor memory device may include a plurality of memory cells wherein identifiers may be provided to the memory cells. The semiconductor memory device may include a first circuit, a second circuit and a power control circuit. The first circuit may include a first power terminal and a second power terminal. The second circuit may include a third terminal and a fourth terminal. The power control circuit may be configured to apply a first power voltage or a ground voltage to the first power terminal and to apply the ground voltage to the second power terminal based on the identifiers.
Public/Granted literature
- US20220101888A1 SEMICONDUCTOR MEMORY DEVICE, PROCESSING SYSTEM INCLUDING THE SAME AND POWER CONTROL CIRCUIT FOR THE SAME Public/Granted day:2022-03-31
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